HUANG Hong-yun.Effects of High Electrostatic Field（HVEF）on Growth of Soybean Seedlings[J].Soybean Science,2012,31(06):1030-1032.[doi:10.3969/j.issn.1000-9841.2012.06.038]
高压静电场对大豆幼苗生长的影响
- Title:
- Effects of High Electrostatic Field（HVEF）on Growth of Soybean Seedlings
- 文章编号:
- 1000-9841（2012）06-1030-03
- Keywords:
- Soybean seed; Germination; Electric field; Biological effect; Enzyme activity
- 分类号:
- S565.1
- 文献标志码:
- A
- 摘要:
- 用10个电场强度分别处理大豆种子15和20 min，并对幼苗形态和生理生化指标进行测定。结果表明，随着电场强度的增加，各指标均呈先增加后降低的变化趋势；在处理时间相同时，0~6.0 kV·cm-1的电场对大豆种子有明显的刺激效应，在5.0 kV·cm-1时各形态指标达到极值；电场作用20 min比 15 min效果好。由此得到处理大豆种子的最佳电场条件是5.0~6.0 kV·cm-1作用20 min。
- Abstract:
- Soybean seeds were treated with 0-10.0 kV·cm-1high electrostatic field for 15 and 20 min,and the physiological and biochemical indexes of soybean seedlings were measured.With the increasing of electrostatic field,the tested index all showed increasing and then decreasing trend,and 0-6.0 kV·cm-1 electric field had stimulation effects.The effects of treating 20 min was better than 15 min.Results suggest the best electric field condition for soybean seeds is under 5.0-6.0 kV·cm-1 for 20 min.
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备注/Memo
作者简介：黄洪云（1979-）,女，硕士，实验师，主要从事生物物理研究。E-mail：lzyhhy0922@163.com。